Design of Hetero-Dielectric Single-Metal Gate-All-Around MOSFET with Schottky Contact Source/Drain

Author:

Devi Ram,Kaur Gurpurneet

Publisher

Springer Nature Singapore

Reference14 articles.

1. Shailaja J, Priya YY (2017) A brief study on challenges of MOSFET and evolution of FINFETs. In: International conference on emerging trends in engineering, science and management, vol 05, no 03

2. Gautam R, Saxena M, Gupta RS, Gupta M (2013) Gate all around MOSFET with vacuum gate dielectric for improved hot carrier reliability and RF performance. IEEE Trans Electron Devices 60:1820–1827

3. Wikipedia, https://en.wikipedia.org/wiki/Nanowire, last accessed 2023/03/15

4. Signoffsemiconductors, https://signoffsemiconductors.com/gate-all-around-fet/, last accessed 2023/02/22

5. Kaur A, Mehra R, Saini A (2019) Hetero-dielectric oxide engineering on dopingless gate all around nanowire MOSFET with Schottky contact source/drain. AEU Int J Electron Commun 152888

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