Design of RC Snubber for Reduction of Switch Ringing in SiC MOSFET-Based Boost Converter
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-4175-9_32
Reference8 articles.
1. Yang X, Xu M, Li Q, Wang Z, He M (2022) Analytical method for RC snubber optimization design to eliminate switching oscillations of SiC MOSFET. IEEE Trans Power Electron 37(4):4672–4684. https://doi.org/10.1109/TPEL.2021.3127516
2. Yi P, Cui Y, Vang A, Wei L (2018) Investigation and evaluation of high power SiC MOSFETs switching performance and overshoot voltage. In: Conference proceedings—IEEE applied power electronics conference and exposition—APEC, April 2018, vol 2018–March, pp 2589–2592. https://doi.org/10.1109/APEC.2018.8341382
3. Li C, Chen S, Luo H, Li C, Li W, He X. A modified RC snubber with coupled inductor for active voltage balancing of series-connected SiC MOSFETs. IEEE Trans Power Electron 36(10):11208–11220. https://doi.org/10.1109/TPEL.2021.3068667
4. Ahmed MR, Todd R, Forsyth AJ (2015) Analysis of SiC MOSFETs under hard and soft-switching. In: 2015 IEEE energy conversion congress and exposition, ECCE 2015, October 2015, pp 2231–2238. https://doi.org/10.1109/ECCE.2015.7309974
5. Wu L, Zhao J, Xiao L, Chen G (2018) Investigation of the effects of snubber capacitors on turn-on overvoltage of SiC MOSFETs. In: Proceedings of the 2018 international power electronics conference, IPEC-Niigata. https://doi.org/10.23919/IPEC.2018.8507768
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