Reduction of Current-Collapsing in Small Gate to Drain Length AlGaN/GaN Super Hetero-Junction HEMT for High-Frequency Applications
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-2680-0_37
Reference21 articles.
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2. Sun H, Alt AR, Benedickter H, Bolognesi CR (2009) High performance 0.1-μm gate AlGaN/GaN HEMTs on silicon with low-noise figure at 20 GHz. IEEE Electron Device Lett 30(2):107–109
3. Chen KJ, Zhou C (2011) Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology. Physica Status Solidi (A) 208:434–438
4. Uemoto Y, Hikita M, Ueno H, Matsuo H, Ishida H, Yanagihara M, Ueda T, Tanaka T, Ueda D (2007) Gate Injection Transistor (GIT)-A normally-off AlGaN/GaN power transistor using conductivity modulation. IEEE Trans Electron Devices 54(12):3393–3399
5. Tapajna M, Hilt O, Bahat-Treidel E, Wurfl J, Kuzmik J (2016) Gate Reliability investigation in normally-off p-Type-GaN Cap/AlGaN/GaN HEMTs under forward bias stress. IEEE Electron Device Lett 37(4):385–388
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