Gate All Around 22 nm SOI Schottky Barrier MOSFET with High ION/IOFF Current Ratio for Low-Power Digital and Analog Circuit Applications
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-0412-9_6
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1. RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications;Microsystem Technologies;2024-01-16
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