Enhance the Electron Injection Efficiency for DUV LEDs
Author:
Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-13-6179-1_5
Reference20 articles.
1. Zhang Z-H, Zhang Y, Bi W, Demir HV, Sun XW (2016) On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates. Phys Status Solidi (a) 213(12):3078–3102. https://doi.org/10.1002/pssa.201600281
2. Cho J, Schubert EF, Kim JK (2013) Efficiency droop in light-emitting diodes: challenges and countermeasures. Laser Photonics Rev 7(3):408–421. https://doi.org/10.1002/lpor.201200025
3. Sun W, Shatalov M, Deng J, Hu X, Yang J, Lunev A, Bilenko Y, Shur M, Gaska R (2010) Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power. Appl Phys Lett 96(6):061102. https://doi.org/10.1063/1.3302466
4. Zhang Z-H, Chen S-WH, Chu C, Tian K, Fang M, Zhang Y, Bi W, Kuo H-C (2018) Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency. Nanoscale Res Lett 13:122. https://doi.org/10.1186/s11671-018-2539-9
5. Huang J, Guo ZY, Guo M, Liu Y, Yao SY, Sun J, Sun HQ (2017) Study of deep ultraviolet light-emitting diodes with a p-AlInN/AlGaN superlattice electron-blocking layer. J Electron Mater 46(7):4527–4531. https://doi.org/10.1007/s11664-017-5413-0
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