Radio Frequency Transistor Stability and Design Challenges
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-0157-9_2
Reference7 articles.
1. Edwards ML, Sinsky JH (1992) A new criterion for linear 2-port stability using a single geometrically derived parameter. IEEE Trans Microw Theory Tech 40(12):2303–2311
2. Ellinger F, Claus M, Schröter M, Carta C (2011) Review of advanced and beyond CMOS FET technologies for radio frequency circuit design. In: 2011 SBMO/IEEE MTT-S international microwave and optoelectronics conference (IMOC 2011), October, IEEE, pp 347–351
3. Jan CH, Agostinelli M, Deshpande H, El-Tanani MA, Hafez W, Jalan U, ... Bai P (2010) RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications. In: 2010 international electron devices meeting, December, IEEE, pp 27–2
4. Rollett J (1962) Stability and power-gain invariants of linear twoports. IRE Trans Circuit Theory 9(1):29–32
5. Schwierz F, Liou JJ (2007) RF transistors: recent developments and roadmap toward terahertz applications. Solid-State Electron 51(8):1079–1091
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