A Novel Wireless-Power-Transfer-Based Snubber Circuit for Suppressing High-Frequency Oscillation of SiC Power MOSFETs
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-0873-4_46
Reference14 articles.
1. Emon, A.I., Hassan, M.U., Mirza, A.B., Narayanasamy, B., Luo, F.: A figure of merit for SiC MOSFET power modules to achieve high-power-density energy conversion. IEEE Trans. Electron Dev. 70(7), 3718–3725 (2023)
2. Zhang, B., Wang, S.: A crosstalk suppression technique for SiC MOSFETs in the bridge-leg configuration. In: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, USA (2020)
3. Li, B., Yang, X., Wang, K., Zhu, H., Wang, L., Chen, W.: A compact double-sided cooling 650V/30A GaN power module with low parasitic parameters. IEEE Trans. Power Electron. 37(1), 426–439 (2022)
4. Nayak, P., Hatua, K.: Parasitic inductance and capacitance-assisted active gate driving technique to minimize switching loss of SiC MOSFET. IEEE Trans. Ind. Electron. 64(10), 8288–8298 (2017)
5. Shin, D., Sul, S.-K., Sim, J., Kim, Y.-G.: Snubber circuit of bidirectional solid state DC circuit breaker based on SiC MOSFET. In: 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA (2018)
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