Computing Threshold Voltage Shift in Submicron MOSFET in Presence of Body Effect and Induced Lateral Field
Author:
Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-15-7486-3_48
Reference17 articles.
1. Kim YB (2010) Challenges for nanoscale MOSFETs and emerging nanoelectronics. Trans Electr Electron Mater 11(3):93–105
2. Gupta KA, Anvekar DK, Venkateswarlu V (2013) Comparative study and analysis of short channel effects for 180 nm and 45 nm transistors. Adv Intell Syst Comput Adv Comput Inf Technol 178:707–715
3. Djeffal F, Ghoggali Z, Dibi Z, Lakhdar N (2009) Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. Microelectron Reliab 49:337–381
4. Jagtap SM, Gond VJ (2017) Study the performance parameters of novel scale FINFET Device in nm Region. In: International conference of electronics communication and aerospace technology
5. Asthana PK, Goswami Y, Ghosh B (2016) A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications. J Semicond 37(5): 054002
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3