Effect of Temperature on Phase Formation in Thin Bilayer Ni/GaAs Films
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Publisher
Springer Singapore
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http://link.springer.com/content/pdf/10.1007/978-981-13-6133-3_29
Reference22 articles.
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2. Yildirim N, Korkut H, Türüt A (2009) Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes. EPJ AP 45(1): 10302-1–10302-7. https://doi.org/10.1051/epjap:2008191
3. Filippov DA, Firsova TO, Laletin VM et al (2017) The magnetoelectric effect in nickel–GaAs–nickel structures. Tech Phys Lett +43(3): 313–315. https://doi.org/10.1134/S106378501703018X
4. Soda T, Minakawa S, Futamoto M et al (2018) Structure characterization of Fe Co, and Ni thin films epitaxially grown on GaAs (111) substrate. JMSJ 42(2):30–36. https://doi.org/10.3379/msjmag.1803R005
5. Dukarov SV, Pojda VP, Churilov IG (2017) Wetting of nickel films of variable thickness by island lead condensates. In: Proceedings of the 2017 IEEE 7th international conference on nanomaterials: applications & properties (NAP-2017) Part 1, Zatoka, Ukraine, 10–15 Sept, 2017, p 01PCSI08. https://doi.org/10.1109/NAP.2017.8190145
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1. Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices;Materials Science in Semiconductor Processing;2023-02
2. Thickness Effect on the Solid-State Reaction of a Ni/GaAs System;Nanomaterials;2022-07-30
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