Performance Evaluation and Comparison of CNTFET-Based 7T SRAM with 6T SRAM

Author:

Mathur Neha,Birla Shilpi

Publisher

Springer Singapore

Reference24 articles.

1. Zhang Z, Delgado-Frias JG (2011) Low power and metallic CNT tolerant CNTFET SRAM design. In: 11th IEEE International conference on nanotechnology, Portland Marriott, vol A247, pp 1177–1182

2. Prasad R, Madhavi BK, Lal Kishore K (2011) Design of low write-power consumption SRAM cell based on CNTFET at 32 nm technology. Int J VLSI Design Commun Syst (VLSICS) 2:167–177

3. Prasad R, Madhavi BK, Lal Kishore K (2012) Low leakage-power SRAM cell design using CNTFETs at 32 nm technology. LNICST 108:165–171

4. Murotiya SI, Matta A, Gupta A (2012) Performance evaluation of CNTFET-based SRAM cell design. Int J Electr Electron Eng (IJEEE) 2:78–83

5. Parimala Devi M, Sharmila D, Meenakshi K (2013) Comparative study of 8T SRAM cell using CMOS, FinFET and CNTFET in nanoscale technologies. Int J Electron Commun Technol 4:7–10

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3