Author:
Shakher Tyagi Chandra,Sharma R. L.,Mani Prashant
Reference10 articles.
1. Mani P, Sharma S (2015) Analysis of narrow channel single gate fully depleted SOI MOSFET. Int J Eng Res Manag Technol 2(2)
2. Choi C-H, Goo J-S, Oh T-Y, Yu Z, Dutton RW, Bayoumi A, Cao M, Voorde PV, Vook D, Diaz CH (1999) MOS C-V characterization of ultra-thin gate oxide thickness (1.3–1.8 nm). IEEE Electron Device Lett 20:292–294
3. Wu Y, Lee Y-M, Lucovsky G (2000) 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE Electron Device Lett 21:116–118
4. Choi C-H, Wu Y, Goo J-S, Yu Z, Dutton RW (2000) Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS. IEEE Trans Electron Devices 47:1843–1850
5. The International technology Roadmap for semiconductor (2009) Emerging Research Devices
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献