Study and Analysis of AlGaN/GaN-Based HEMT and MOSHEMT
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-3691-5_20
Reference26 articles.
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2. Mimura T (2005) Development of high electron mobility transistor. Jpn J Appl Phys 44(12):8263–8268. https://doi.org/10.1143/jjap.44.8263
3. Dubey SK, Sinha K, Sahu PK et al (2020) Characterization of InP-based pseudomorphic HEMT with T-gate. Microsyst Technol 26:2183–2191. https://doi.org/10.1007/s00542-019-04491-3
4. Sinha K, Dubey SK, Islam A (2020) Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier. Microsyst Technol 26:2145–2158. https://doi.org/10.1007/s00542-019-04466-4
5. Endoh A, Yamashita Y, Hikosaka K, Matsui T, Hiyamizu S, Mimura T (2006) Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs. Electron Lett 42(8):490–492. https://doi.org/10.1049/el:20060513
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