Investigation of Electrical Parameters and Low-Frequency Noise Analysis of a Heterojunction TFET
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-3767-4_27
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5. Lu H, Esseni D, Seabaugh AP (2015) Universal analytic model for tunnel FET circuit simulation. Solid State Electron 108:110–117. https://doi.org/10.1016/j.sse.2014.12.002
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