Physical Modelling of Gallium Nitride (GaN) Based Double Barrier Quantum Well Device
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-13-6447-1_18
Reference9 articles.
1. Bayram, C., Vashaei, Z., Razeghi, M.: Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes. Appl. Phys. Lett. 97(18), 181109 (2010). https://doi.org/10.1063/1.3515418
2. Boucherit, M., Soltani, A., Monroy, E., Rousseau, M., Deresmes, D., Berthe, M., Jaeger, J.C.D.: Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes. Appl. Phys. Lett. 99(18), 182109 (2011). https://doi.org/10.1063/1.3659468
3. Petrychuk, M.V., Belyaev, A.E., Kurakin, A.M., Danylyuk, S.V., Klein, N., Vitusevich, S.A.: Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures. Appl. Phys. Lett. 91(22), 222112 (2007). https://doi.org/10.1063/1.2817752
4. Chowdhury, S., Chattaraj, S., Biswas, D.: Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate. J. Semicond. 36(4), 044001 (2015). https://doi.org/10.1088/1674-4926/36/4/044001
5. Singh, M.M., Siddiqui, M.J., Saxena, A.: Comparative simulation of GaAs and GaN based double barriers-resonant tunneling diode. Procedia Comput. Sci. 85, 581–587 (2016). https://doi.org/10.1016/j.procs.2016.05.224
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