Study on the Negative Transconductance in a GaN/AlGaN-Based HEMT
Author:
Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-7533-4_29
Reference16 articles.
1. Asif Khan M, Bhattarai A, Kuznia JN, Olson DT (1993) High electron mobility transistor based on a GaN-Alx Ga1−x N heterojunction. Appl Phys Lett 63(9):1214–1215
2. Lenka TR, Panda AK (2011) Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT. Semiconductors 45(5):650–656
3. Mishra UK, Shen L, Kazior TE, Wu YF (2008) GaN-based RF power devices and amplifiers. Proc IEEE 96(2):287–305
4. Dora Y, Chakraborty A, McCarthy L, Keller S, DenBaars SP, Mishra UK (2006) High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates. IEEE Electron Device Lett 27(9):713–715
5. Mizutani T, Ito M, Kishimoto S, Nakamura F (2007) AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation. IEEE Electron Device Lett 28(7):549–551
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