Single Event Transients in SiGe HBT
Publisher
Springer Singapore
Reference16 articles.
1. F. Darracq, H. Lapuyade, N. Buard, F. Mounsi, B. Foucher, P. Fouillat, M. Calvetand, R. Dufayel, Backside SEU laser testing for commercial off-the-shelf SRAMs. IEEE Trans. Nucl. Sci. 49(6), 2977–2983 (2002) 2. P.W. Marshall, M.A. Carts, A. Campbell, D. McMorrow, S. Buchner, R. Stewart, B. Randall, B. Gilbertand, R.A. Reed, Single event effects in circuit-hardened SiGe HBT logic at Gigabit per second data rates. IEEE Trans. Nucl. Sci. 47(63), 2669–2674 (2000) 3. J.A. Pellish, R.A. Reed, D. McMorrow, J.S. Melinger, P. Jenkins, A.K. Sutton et al., Laser-induced current transients in silicon-germanium HBTs. IEEE Trans. Nucl. Sci. 55(6), 2936–2942 (2008) 4. R.A. Reed, R.A. Weller, R.D. Schrimpf, M.H. Mendenhall, K.M. Warrenand, L.W. Massengill, Implications of nuclear reactions for single event effects test methods and analysis. 53(6), 3356–3362 (2006) 5. R.A. Reed, P.W. Marshall, J.C. Pickel, M.A. Carts, B. Fodness, G.F. Niu et al., Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-mu m SiGe heterojunction bipolar transistors and circuits. IEEE Trans. Nucl. Sci. 50(61), 2184–2190 (2003)
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