Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-32-9775-3_37
Reference20 articles.
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3. Read, W.: A proposed high-frequency negative-resistance diode. Bell Syst. Tech. J. 37, 401–446 (1958). https://doi.org/10.1002/j.1538-7305.1958.tb01527.x
4. Johnston, R.L., DeLoach Jr., B.C., Cohen, B.G.: A silicon diode microwave oscillator. Bell Syst. Tech. J. 44, 369–372 (1965). https://doi.org/10.1002/j.1538-7305.1965.tb01667.x
5. Lee, C.A., Batdorf, R.L., Wiegmann, W., Kaminski, G.: The read diode—an avalanching, transit-time, negative resistance oscillator. Appl. Phys. Lett. 6, 89–91 (1965). https://doi.org/10.1063/1.1754180
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