Author:
Hadini Yassine,Galadi Abdelghafour,Echchelh Adil
Reference23 articles.
1. Baliga BJ, Adler MS, Love RF, Gray PV, Zommer ND (1984) The insulated gate transistor: a new three-terminal MOS-controlled bipolar power device. IEEE Trans Electron Devices 31:821–828
2. Mihalič F, Jezernik K, Krischan K, Rentmeister M (1995) IGBT spice model. IEEE Trans Industr Electron 42:98–105
3. Hefner AR (1988) Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT). In: Conference record of the 1988 IEEE industry applications society annual meeting, vol 1, pp 606–614
4. Yuan S, Yuan S, Hong Y, Liu Y (2010) SPICE model for IGBT temperature effects compared with measurements. In: 2010 international conference on electrical and control engineering, pp 3037–3040
5. Baliga BJ (2015) The IGBT device: physics, design and applications of the insulated gate bipolar transistor. William Andrew/Elsevier, Kidlington, Oxford, Waltham