Design and Analysis Delay of FinFET and CMOS 6T SRAM Using 22 nm Technology
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-5435-3_32
Reference19 articles.
1. Han OH, Shin CW, Rawat CW, Mittal B, Abbasian P (2019) Erfan M (2019) Design and performance analysis of 6T SRAM cell on different CMOS technologies with stability characterization. IOP Conf. Series: materials science and engineering 561
2. Joshi RV, Kim K, Kanj R (2010) FinFET SRAM design. In: procceding international conference VLSI Design pp 440–445
3. LokeshSB (2018) Design of read and write operations For 6t SRAM Cell. IOSR J VLSI Sign Proces (IOSR-JVSP)8(1):43–46
4. Jha NK, Bhattacharya D (2014) FinFETs: from architectures to devices. Adv Electron 365689 21
5. Chandel R, Sharma N, Singh P (2017) Stability analysis of SRAM cell using CNT and GNR field effect transistors. In: Tenth international conference on contemporary computing (IC3) pp 1–6 IEEE
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