Design and Analysis of LK Model Based FEFET Memories
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-4943-1_33
Reference10 articles.
1. Li Y, Lian Y, Yao K, Samudra GS (2015) Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory. Solid State Electron 114:17–22
2. Salahuddin S, Datta S (2008) Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett 8(2):405–410
3. Jain A, Alam MA (2014) Stability constraints define the minimum subthreshold swing of a negative capacitance field-effect transistor. IEEE Trans Electron Devices 61(7):2235–2242
4. Kobayashi M, Hiramoto T (2015) Device design guideline for steep slope ferroelectric FET using negative capacitance in sub-0.2 V operation: operation speed, material requirement and energy efficiency. In: Proceedings symposium VLSI technology, June 2015, pp T212–T213
5. Sivasubramanian S, Widom A, Srivastava Y (2003) Equivalent circuit and simulations for the Landau Khalatnikov model of ferroelectric hysteresis. IEEE Trans Ultrason Ferroelectr Freq Control 50(8):950–957
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