Author:
Zhu Wentao,Hou Debin,Chen Jixin,Hong Wei
Reference11 articles.
1. Hsieh, J.: Low-noise amplifier by using a signal-reuse wake-up technology. In: IET Microwaves, Antennas & Propagation, vol. 12, no. 3, pp. 287–294 (2018)
2. Wang, Y., Yu, W.: Design and simulation of a W-band broadband low noise amplifier. In: 2013 IEEE International Conference on Microwave Technology & Computational Electromagnetics, Qingdao, China, pp. 119–122 (2013)
3. Leuther, A., et al.: 70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers. In: International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, USA, pp. 215–218 (2003)
4. Chiong, C., Chen, H., Kao, J., Wang, H., Chen, M.: 180–220 GHz MMIC amplifier using 70-nm GaAs MHEMT technology. In: 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Taipei, pp. 1–4 (2016)
5. Ciccognani, W., Giannini, F., Limiti, E., Longhi, P.E.: Full W-band high-gain LNA in mHEMT MMIC technology. In: 2008 European Microwave Integrated Circuit Conference, Amsterdam, pp. 314–317 (2008)