Preparation and Characteristic Analysis of Ultra-Low Dielectric Constant Nano-Porous Silicon Oxide Films

Author:

Zhang Gaimei,Cao Yue,Zhang Yinglu,Song Xiaoli,Lu Jiandong,Li Shasha

Publisher

Springer Singapore

Reference22 articles.

1. Ning Z, Ye C (2004) Ultra-low dielectric constant materials and porous SiOCH films. World Sci-Tech R&D 6:19–23

2. Ye C, Ning Z (2006) Ultra-low dielectric constant materials and porous SiCOH film for nano-electronic devices. Physics 35(4):322–329

3. Fu Z (2011) Preparation of porous materials with low dielectric constant. Nanjing University of Technology, Nanjing

4. Favennec L, Jousseaume V et al (2004) Porous extreme low k (EL k) dielectrics using a PECVD porogen approach. Mater Sci Semicond Process 7(4)

5. Jousseaume V, Zenasni A et al (2012) Ultra-low-k by CVD: deposition and curing. Advanced Interconnects for ULSI Technology. Wiley, New York, pp 35–77

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