1. S. Lai, Current status of the phase change memory and its future. IEEE, 255–258 (2003)
2. X. Chen, Y. Wang, Y. Cheng, X. Zhou, S. Lv, Y. Chen, Y. Wang, M. Zhou, H. Chen, Y. Zhang, Z. Song, G. Feng, RESET distribution improvement of phase change memory: the impact of pre-programming. IEEE Electron Dev. Lett. 35, 536–538 (2014)
3. Y. Wang, D. Cai, Y. Chen, Y. Wang, H. Wei, R. Huo et al., Optimizing set performance for phase change memory with dual pulses set method. ECS Solid State Lett. 4, Q32–Q35 (2015)
4. Y. Wang, D. Cai, Y. Chen, Y. Wang, H. Wei, R. Huo et al., Reduction of reset current in phase change memory by pre-programming. ECS J. Solid State Sci. Technol. 5, Q13–Q16 (2016)
5. X. Chen, W. Yuchan, S. Zhitang, C. Yifeng, W. Yueqing, C. Hongpeng, R. Feng, Test system of current pluses based on phase change mmeory device, Semicond. Optoelectron. 35, 136–143 (2014)