A Novel Dual Metal Double Gate Grooved Trench MOS Transistor: Proposal and Investigation
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-0105-8_50
Reference17 articles.
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4. Polishchuk I, Ranade P, King T-J, Hu C (2001) Dual work function metal gate CMOS technology using metal inter diffusion. IEEE Electron Device Lett 22(9):444–446. https://doi.org/10.1109/55.944334
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