Effect of Energy Loss Due to $$1s \to 2p$$ Excitation and Ionization of Neutral Impurities on the Non-Ohmic Characteristics of a Compound Semiconductor at Low Lattice Temperature
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-8366-7_57
Reference9 articles.
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4. Bhattacharya, D.P., Pramanik, T.K.: Effect of finite energy of deformation-potential acoustic phonons on the temperature of non-equilibrium carriers. J. Phys. Chem. Sol. 52, 735–744 (1991)
5. Kachlishvili, Z.S.: Inelastic impurity scattering of hot electrons in semiconductors. Phys. Stat. Sol. 48, 65 (1971)
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