Study of the effect of temperature on the detectivity and sensitivity of GeSn-based heterojunction phototransistor for mid-wave infrared applications

Author:

Kumar HarshvardhanORCID,Basu Rikmantra

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds;Thin Films - Growth, Characterization and Electrochemical Applications;2024-01-17

2. YAG:Ce PiGF@Alumina‐Substrate in a Reflection Mode for High‐Brightness Laser‐Driven Projection Display;Advanced Materials Technologies;2023-04-25

3. Si-based High Responsivity Germanium-Tin MQW p-i-n Photodetectors for Broadband Applications;2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC);2022-05-29

4. GeSn-based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications;IEEE Transactions on NanoBioscience;2021

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