Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling-Reference-Cited by-同舟云学术

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Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

Published:2006-11-30 Issue:3 Volume:86 Page:503-510
ISSN:0946-2171
Container-title:Applied Physics B
language:en
Short-container-title:Appl. Phys. B

Author:

Jacquemet M.,Domenech M.,Lucas-Leclin G.,Georges P.,Dion J.,Strassner M.,Sagnes I.,Garnache A.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://link.springer.com/content/pdf/10.1007/s00340-006-2499-0.pdf

Reference25 articles.

1. M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999)

2. W.J. Alford, T.D. Raymond, A.A. Allerman, J. Opt. Soc. Am. B 19, 663 (2002)

3. S. Hoogland, S. Dhanjal, A. Tropper, J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, U. Keller, IEEE Photon. Technol. Lett. 12, 1135 (2000)

4. A. Garnache, S. Hoogland, A. Tropper, I. Sagnes, G. Saint-Girons, J. Roberts, Appl. Phys. Lett. 80, 3892 (2002)

5. A. Garnache, A. Kachanov, F. Stoeckel, R. Houdre, J. Opt. Soc. Am. B 7, 1589 (2000)

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