Photogalvanic effects in noncentrosymmetric semiconductors-Reference-Cited by-同舟云学术

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Photogalvanic effects in noncentrosymmetric semiconductors

Published:1980 Issue: Volume: Page:388-406
ISSN:0075-8450
Container-title:Narrow Gap Semiconductors Physics and Applications
language:
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Author:

Pikus G. E.,Ivchenko E. L.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/3-540-10261-2_54

Reference28 articles.

1. A.M. Danishevskii, A.A. Kastalskii, S.M. Ryvkin, and I.D. Yaroshetskii, Zh. Eksp. Teor. Fiz., 58, 544 (1970).

2. A.A. Grinberg, Zh. Eksp. Teor. Fiz., 58, 989 (1970).

3. A.F. Gibson, M.E. Kimmit, and A.C. Walker, Appl. Phys. Lett., 17 75 (1970).

4. K.H. Herrmann and R. Vogel, Proc. XI-th Int.Conf.Phys. of Semicond. Warsaw 1972, p. 870.

5. C.R. Hammond, J.R. Jenkins, and C.R. Stanley, Optoelectronics, 4, 189 (1972).

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1. Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low‐Dimensional Topological Insulator Superlattices;Advanced Materials;2023-01-18

2. A scanning, all-fiber Sagnac interferometer for high resolution magneto-optic measurements at 820 nm;Review of Scientific Instruments;2014-10

3. Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field;Applied Physics Letters;2013-02-18

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