The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD-Reference-Cited by-同舟云学术

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The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD

Published:2011-01-22 Issue:3 Volume:54 Page:446-449
ISSN:1674-7348
Container-title:Science China Physics, Mechanics and Astronomy
language:en
Short-container-title:Sci. China Phys. Mech. Astron.

Author:

He Tao,Li Hui,Dai LongGui,Wang XiaoLi,Chen Yao,Ma ZiGuang,Xu PeiQiang,Jiang Yang,Wang Lu,Jia HaiQiang,Wang WenXin,Chen Hong

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11433-010-4232-6.pdf

Reference19 articles.

1. Nakamura S. The role of structural imperfections in InGaN-based blue light-emitting diodes and Laser diodes. Science, 1998, 281: 956–961

2. Asif Khan M, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN-AlxGa1−x N heterojunction. Appl Phys Lett, 1993, 63: 1214–1215

3. Morkoc H, Strite S, Gao G B, et al. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. J Appl Phys, 1994, 76: 1363–1398

4. Nakamura S, Senoh M, Mukai T. Highly P-typed Mg-doped GaN films grown with GaN buffer layers. Jpn J Appl Phys, 1991, 30: L1708–L1711

5. Im J S, Kollmer H, Off J, et al. Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1−x N quantum wells. Phys Rev B, 1998, 57: R9435–R9438

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1. Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers;Chinese Physics B;2012-11

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