Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing-Reference-Cited by-同舟云学术

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Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing

Published:2020-06-04 Issue:9 Volume:63 Page:
ISSN:1674-7348
Container-title:Science China Physics, Mechanics & Astronomy
language:en
Short-container-title:Sci. China Phys. Mech. Astron.

Author:

Fang YiLin,Shi Tuo,Zhang XuMeng,Wu ZuHeng,An JunJie,Wei JinSong,Lu Jian,Liu Qi

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11433-020-1548-1.pdf

Reference25 articles.

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2. X. Zhao, X. Zhang, D. Shang, Z. Wu, X. Xiao, R. Chen, C. Tang, J. Liu, W. Li, H. Lv, C. Jiang, Q. Liu, and M. Liu, IEEE Electron Device Lett. 40, 554 (2019).

3. W. Wang, Z. H. Wu, T. Shi, Y. Z. Wang, S. Liu, R. R. Cao, H. Xu, Q. Liu, and Q. J. Li, Sci. China-Phys. Mech. Astron. 62, 127821 (2019).

4. V. Ravichandran, C. Li, A. Banagozar, J. J. Yang, and Q. Xia, Sci. China Inf. Sci. 61, 060423 (2018).

5. N. K. Upadhyay, S. Joshi, and J. J. Yang, Sci. China Inf. Sci. 59, 061404 (2016).

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