Electronic structure and optical properties of Sn2x Ga2(1−x)O3 compounds-Reference-Cited by-同舟云学术

Electronic structure and optical properties of Sn2x Ga2(1−x)O3 compounds

Published:2011-01-22 Issue:3 Volume:54 Page:459-464
ISSN:1674-7348
Container-title:Science China Physics, Mechanics and Astronomy
language:en
Short-container-title:Sci. China Phys. Mech. Astron.

Author:

Yan JinLiang,Zhang YiJun

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11433-010-4231-7.pdf

Reference27 articles.

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2. Li Z, Groot C D, Jagadeesh J. Gallium oxide as an insulating barrier for spin-dependent tunneling junctions. Appl Phys Lett, 2000, 77(22): 3630–3632

3. Meixner H, Gerblinger J, Lampe U, et al. Thin-film gas sensors based on semiconducting metal oxides. J Appl Phys, 1993, 7(1): 119–125

4. Baizaee S M, Mousavi N. First-principles study of the electronic and optical properties of rutile TiO2. Physica B, 2009, 404(16): 2111–2116

5. Liu B, Mu G, Liu X L. Lattice dynamical, dielectric, and thermodynamic properties of β-Ga2O3 from first principles. Appl Phys Lett, 2007, 91(17): 102–105

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