Effect of Er ion implantation on the physical and electrical properties of TiN/HfO2 gate stacks on Si substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-013-5124-3.pdf
Reference16 articles.
1. Wilk G D, Wallace R M, Anthony J M. High-k gate dielectrics: Current status and materials properties considerations. J Appl Phys, 2001, 89: 5243–5275
2. Wang Y Y. The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption. Sci China-Inf Sci, 2011, 54: 915–935
3. Schaeffer J K, Fonseca L R C, Samavedam S B, et al. Contributions to the effective work function of platinum on hafnium dioxide. Appl Phys Lett, 2004, 85: 1826–1828
4. Copel M, Pezzi R P, Cabral C. Interfacial segregation of dopants in fully silicided metal-oxide-semiconductor gates. Appl Phys Lett, 2005, 86: 251904
5. Harris H R, Alshareef H, Wen H C, et al. Simplified manufacturable band edge metal gate solution for NMOS without a capping layer. In: Electron Devices Meeting, 2006. IEDM’ 06. San Francisco: IEEE, 2006. 1–4
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