Effect of Surface State Density on Oxygen Chemisorption, Grain Potential and Carrier Concentration for Different Grain Sizes of Nanocrystallite Metal Oxide Semiconductors: A Numerical Modelling Approach-Reference-Cited by-同舟云学术

Effect of Surface State Density on Oxygen Chemisorption, Grain Potential and Carrier Concentration for Different Grain Sizes of Nanocrystallite Metal Oxide Semiconductors: A Numerical Modelling Approach

Published:2020-05-27 Issue:1 Volume:46 Page:617-630
ISSN:2193-567X
Container-title:Arabian Journal for Science and Engineering
language:en
Short-container-title:Arab J Sci Eng

Author:

Kumar Anil,Kumar Ravi,Singh Rakesh,Prasad B.,Kumar Dinesh,Kumar Mukesh

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://link.springer.com/content/pdf/10.1007/s13369-020-04630-3.pdf

Reference28 articles.

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3. Korotcenkov, G.: Metal oxides for solid-state gas sensors: what determines our choice? Mater. Sci. Eng. B Solid-State Mater. Adv. Technol. 139(1), 1–23 (2007)

4. Barsan, N.; Weimar, U.: Conduction model of metal oxide gas sensors. J. Electroceram. 7(3), 143–167 (2001)

5. Wolkenstein, T.: Electronic Processes on Semiconductor Surfaces During Chemisorption. Springer, Berlin (1991)

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