Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4 + CHF3 + O2 Inductively Coupled Plasma-Reference-Cited by-同舟云学术

Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4 + CHF3 + O2 Inductively Coupled Plasma

Published:2019-03-15 Issue:4 Volume:39 Page:1127-1144
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Lee Junmyung,Kim Jihun,Efremov Alexander,Kim Changmok,Lee Hyun Woo,Kwon Kwang-Ho

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s11090-019-09973-w.pdf

Reference58 articles.

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4. Lindroos V, Tilli M, Lehto A, Motooka T (2010) Handbook of silicon based MEMS materials and technologies (micro and nano technologies). Applied Science Publishers, Oxford

5. Chu TL (1969) Dielectric materials in semiconductor devices. J Vac Sci Technol 6:25–33

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