Ab Initio Chemical Kinetics for the Thermal Decomposition of SiH4 + Ion and Related Reverse Ion–Molecule Reactions of Interest to PECVD of a-Si:H Films-Reference-Cited by-同舟云学术

Ab Initio Chemical Kinetics for the Thermal Decomposition of SiH4 + Ion and Related Reverse Ion–Molecule Reactions of Interest to PECVD of a-Si:H Films

Published:2017-06-03 Issue:4 Volume:37 Page:1249-1264
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Nguyen T. N.,Lee Y. M.,Wu J. S.,Lin M. C.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/article/10.1007/s11090-017-9825-7/fulltext.html

Reference54 articles.

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3. Iliescu C, Tay FEH, Wei J (2006) Low stress PECVD–SiNx layers at high deposition rates using high power and high frequency for MEMS applications. J Micromech Microeng 16:869–874

4. Matsuda A (2004) Thin-film silicon-growth process and solar cell application. Jpn J Appl Phys 43:7909–7920

5. Nishizaki S, Ohdaira K, Matsumura H (2009) Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods. Thin Solid Films 517:3581–3583

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1. Ab Initio Chemical Kinetics for the Thermal Decomposition of SiH2+ and SiH3+ Ions and Related Reverse Ion–Molecule Reactions of Interest to PECVD of α-Si:H Films;Plasma Chemistry and Plasma Processing;2019-07-24

2. Ideal gas thermochemical properties of silicon containing inorganic, organic compounds, radicals, and ions;International Journal of Chemical Kinetics;2018-06-12