On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure-Reference-Cited by-同舟云学术

On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure

Published:2014-01-23 Issue:2 Volume:34 Page:239-257
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Son Jinyoung,Efremov Alexander,Chun Inwoo,Yeom Geun Young,Kwon Kwang-Ho

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s11090-013-9513-1.pdf

Reference40 articles.

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2. Rossnagel SM, Cuomo JJ, Westwood WD (eds) (1990) Handbook of plasma processing technology. Noyes Publications, Park Ridge, NJ

3. Lindroos V, Tilli M, Lehto A, Motooka T (2010) Handbook of silicon based MEMS materials and technologies. William Andrew Applied Science Publishers, Oxford

4. Lyshevski SE (2002) MEMS and NEMS: systems, devices, and structures. CRC Press, New York

5. Rooth JR (1995) Industrial plasma engineering. IOP Publishing LTD, Philadelphia

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