Thin Film Growth of Germanium Selenides from PECVD of GeCl4 and Dimethyl Selenide-Reference-Cited by-同舟云学术

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Thin Film Growth of Germanium Selenides from PECVD of GeCl4 and Dimethyl Selenide

Published:2010-12-23 Issue:2 Volume:31 Page:251-256
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Whitham Patrick J.,Strommen Dennis P.,Lau Lisa D.,Rodriguez René G.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s11090-010-9278-8.pdf

Reference15 articles.

1. Campbell KA, Anderson C (2007) Microelectr J 38:52–59

2. Huang CC, Hewak DW, Badding JV (2004) Opt Express 12:2501–2506

3. Sleeckx E, Nagels P, Callaerts R, VanRoy M (1993) J Phys IV 3:419–426

4. Whitham PJ, Strommen DP, Lau LD, Rodriguez RG (2010) J Non Cryst Solids Submitted for publication August

5. Braker W, Mossman A (1980) Matheson gas data book, 6th edn. Matheson Tri Gas, Lyndhurst

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 硫系集成光子学;Acta Optica Sinica;2022

2. GeS2 and GeSe2 PECVD from GeCl4 and Various Chalcogenide Precursors;Plasma Chemistry and Plasma Processing;2014-04-02

3. Deposition techniques for chalcogenide thin films;Chalcogenide Glasses;2014

4. Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications;Applied Physics Letters;2011-04-11

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