gallium indium arsenide phosphide (Ga(x)In(1-x)As(y)P(1-y)), impurities and defects
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Container-title:Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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Reference6 articles.
1. Fujita, S., Kuzuhara, M., Yagyu, M., Sasaki, A.: Solid State Electron. 25 (1982) 359. 2. Smith, A.W., Shantharama, L.G., Eaves, L., Greene, P.D., Hayes, J.R., Adams, A.R.: J. Phys. D 16 (1983) 679. 3. Shantharama, L.G., Adams, A.R., Allen, E.M., Greene, P.D.: Inst. Phys. Conf. Ser. 74 (1985) 299. 4. Sugawara, M., Kondo, M., Takanohashi, T., Nakajima, K.: Appl. Phys. Lett. 51 (1987) 834. 5. Kwon, H.K., Choe, B.-D., Kwon, S.D., Lim, H.: J. Appl. Phys. 80 (1996) 4211.
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