Growth of high-quality 1.93-eV AIGaAs using metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Growth of high-quality 1.93-eV AIGaAs using metalorganic chemical vapor deposition

Published:1987-09 Issue:5 Volume:16 Page:365-371
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Lewis C. R.,Hamaker H. C.,Green R. T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657912.pdf

Reference30 articles.

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3. H. C. Casey, Jr. and M. B. Panish,Heterostructure Lasers, Part A (Academic Press, New York, 1978).

4. C. R. Lewis, C. W. Ford, W. T. Dietze, J. G. Werthen and M. J. Ludowise, J. Cryst. Growth69, 515 (1984).

5. M. J. Ludowise, W. T. Dietze, R. Boettcher and N. Kaminar, Appl. Phys. Lett.43, 468 (1983).

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