Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering-Reference-Cited by-同舟云学术

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Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering

Published:1990-05 Issue:5 Volume:19 Page:413-418
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Baiocchi F. A.,Ambrose T.,Miller R. O.,Nakahara S.,Brown J. M.,Reynolds C. L.,Lengle S. E.,Peticolas L. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657999.pdf

Reference14 articles.

1. L. Esaki, IEEE J. Quantum Electron. QE-22, 1611 (1986).

2. N. J. Shah and S. S. Pei, AT&T Tech. J.68, 19 (1989).

3. C. L. Reynolds, Jr., to be published.

4. A. Y. Cho, M. B. Panish and I. Hayashi, Proc. Third Int. Symp. GaAs (1970), Institute of Physics, London, (1971), p. 18.

5. W. K. Chu, J. W. Mayer and M. A. Nicolet, Backscattering Spectrometry, Academic Press, New York (1978).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Compound Semiconductor Material by Ion Beams;Handbook of Compound Semiconductors;1995

2. Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlattice;Journal of Applied Physics;1994-08

3. Determination of epitaxial AlxGa1−xAs composition from x‐ray diffraction measurements;Applied Physics Letters;1991-10-28

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