A novel InGaAs PIN photodiode on semi-insulating InP-Reference-Cited by-同舟云学术

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A novel InGaAs PIN photodiode on semi-insulating InP

Published:1986-05 Issue:3 Volume:18 Page:174-177
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Fan C.,Yu P. K. L.,Lin S. C.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02030986.pdf

Reference10 articles.

1. G. E. STILLMAN, L. W. COOK, G. E. BULMAN, N. TABATABAIE, R. CHIN and P. D. DAPKUS,IEEE Trans. Electron. Devices ED-29 (1982) 1355.

2. S. R. FORREST,Laser Focus 18 (1982) 81.

3. R. D. DUPUIS, J. C. CAMPBELL and J. R. VELEBIR,Electron. Lett. 22 (1986) 48.

4. S. Y. WANG and K. W. CAREY,IEEE Trans. Electron. Devices ED-32 (1985) 2535.

5. C. Y. CHEN, A. Y. CHO, N. A. OLSSON and P. A. GARBINSKI,Appl. Phys. Lett. 46 (1985) 296.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hg3In2Te6-based photodiodes for fiber optic communication;physica status solidi (a);2009-02

2. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge;Journal of Applied Physics;1987-08

3. High-speed, self-passivated InGaAs PIN photodiode for microwave fibre links;Electronics Letters;1987-05-21

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