Deposition of silicon carbide thin films from dodecamethylcyclohexasilane-Reference-Cited by-同舟云学术

Deposition of silicon carbide thin films from dodecamethylcyclohexasilane

Published:1991 Issue:22 Volume:10 Page:1323-1325
ISSN:0261-8028
Container-title:Journal of Materials Science Letters
language:en
Short-container-title:J Mater Sci Lett

Author:

Chiu Hisn-Tien,Lee Shu-Fen

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00722649.pdf

Reference10 articles.

1. R. WEST, in ?Ultrastructure processing of ceramics, glasses, and composites?, edited by L. L. Hench and D. R. Ulrich (Wiley, New York, 1984) p.235.

2. S. YAJIMA, J. HAYASHI, and M. OMORI,Nature 261 (1976) 683.

3. S. YAJIMA, M. OMORI, J. HAYASHI, K. OKAMURA, T. MATSUZAWA and C. LIAW,Chem. Lett (1976) 551.

4. S. YAJIMA, Y. HASEGAWA, J. HAYASHI and M. IIMURA,J. Mater. Sci 13 (1978) 2569.

5. Y. HASEGAWA, M. IIMURA and S. YAJIMA ibid.15 (1980) 720.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of ternary Si1−x-yGexCy thin films from a single-source precursor, Ge(SiMe3)4;Journal of Materials Research;1995-09

2. Remote Hydrogen Plasma Chemical Vapor Deposition of Amorphous Hydrogenated Silicon-Carbon Films from an Organosilane Molecular Cluster as a Novel Single-Source Precursor: Structure, Growth Mechanism, and Properties of the Deposit;Chemistry of Materials;1995-07

3. Homocyclic Silanes;Chemical Reviews;1995-07

4. Influence of H 2 Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar;Journal of The Electrochemical Society;1995-02-01

5. Low pressure chemical vapor deposition of silicon carbide thin films from hexamethyldisilane;Thin Solid Films;1994-11