Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3O3
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/BF03184172.pdf
Reference21 articles.
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2. Suzuki, S., Yamamoto, T., Suzuki, H. et al., Fabrication and characterization of Ba1-xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions, J. Appl. Phys., 1997, 81(10): 6830–6836.
3. Shimizu, T., Okushi, H., Intrinsic electrical properties of Au/SrTiO3 Schottky junctions, J. Appl. Phys., 1999, 85(10): 7244–7251.
4. Newns, D. M., Misewich, J. A., Tsuei, C. C. et al., Mott transition field effect transistor, Appl. Phys. Lett., 1998, 73(6): 780–782.
5. Misewich, J. A., Schrott, A. G., Room-temperature oxide field-effect transistor with buried channel, Appl. Phys. Lett., 2000, 76(24): 3632–3634.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electrical and Optical Properties of Transparent Conducting p -Type SrTiO3 Thin Films;Journal of the American Ceramic Society;2015-10-03
2. Enhanced carrier density in Nb-doped SrTiO3thermoelectrics;Journal of Applied Physics;2012-03
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