Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor-Reference-Cited by-同舟云学术

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Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

Published:2021-09-08 Issue: Volume: Page:
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Li Zhou,Bai Wei,Li Yuliang,Li Yuanlong,Wang Sheng,Zhang Weihui,Zhao Jiyin,Sun Zhe,Xiao Chong,Xie Yi

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-021-1765-x.pdf

Reference34 articles.

1. Prinz GA. Magnetoelectronics. Science, 1998, 282: 1660–1663

2. Bai W, Hu Z, Wang S, et al. Intrinsic negative magnetoresistance in van der Waals FeNbTe2 single crystals. Adv Mater, 2019, 31: 1900246

3. Pandey A, Mazumdar C, Ranganathan R, et al. Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd3. Sci Rep, 2017, 7: 42789

4. Baibich MN, Broto JM, Fert A, et al. Giant magnetoresistance of (001) Fe/(001)Cr magnetic superlattices. Phys Rev Lett, 1988, 61: 2472–2475

5. Binasch G, Grünberg P, Saurenbach F, et al. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys Rev B, 1989, 39: 4828–4830

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