Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity-Reference-Cited by-同舟云学术

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Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity

Published:2020-09-25 Issue:3 Volume:64 Page:727-738
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Yu Tianqi,He Fuchao,Zhao Jianhui,Zhou Zhenyu,Chang Jingjing,Chen Jingsheng,Yan Xiaobing

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-020-1444-1.pdf

Reference50 articles.

1. Chua L. Memristor-the missing circuit element. IEEE Electr Device L, 1971, 18: 507–519

2. Strukov DB, Snider GS, Stewart DR, et al. The missing memristor found. Nature, 2008, 453: 80–83

3. Chanthbouala A, Garcia V, Cherifi RO, et al. A ferroelectric memristor. Nat Mater, 2012, 11: 860–864

4. Kim DJ, Lu H, Ryu S, et al. Ferroelectric tunnel memristor. Nano Lett, 2012, 12: 5697–5702

5. Goswami S, Matula AJ, Rath SP, et al. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nat Mater, 2017, 16: 1216–1224

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