Opposite doping distribution in TMD monolayer regulated by VLS and VSS growth mechanism-Reference-Cited by-同舟云学术

Opposite doping distribution in TMD monolayer regulated by VLS and VSS growth mechanism

Published:2023-11-10 Issue:12 Volume:66 Page:4723-4732
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Tian Chuang,Xiao Runhan,Sui Yanping,Feng Yuhan,Wang Haomin,Zhao Sunwen,Liu Jiawen,Gao Xiuli,Sun Hao,Peng Songang,Jin Zhi,Liu Xinyu,Wang Shuang,Li Pai,Yu Guanghui

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-023-2615-1.pdf

Reference42 articles.

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3. Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors. Nat Nanotech, 2011, 6: 147–150

4. Baugher BWH, Churchill HOH, Yang Y, et al. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat Nanotech, 2014, 9: 262–267

5. Wang QH, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotech, 2012, 7: 699–712

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