STM-excited and spectrally resolved luminescence of epitaxial GaN and AlGaN layers grown by MBE-Reference-Cited by-同舟云学术

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STM-excited and spectrally resolved luminescence of epitaxial GaN and AlGaN layers grown by MBE

Published:1998-03-01 Issue:7 Volume:66 Page:S371-S375
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Ortsiefer M.,Liebheit A.,Schwartzkopff M.,Radojkovic P.,Gabriel T.,Hartmann E.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390051166.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning Tunneling Luminescence Studies of Nitride Semiconductor Thin Films under Ambient Conditions;physica status solidi (b);2001-11

2. Multiple-Fiber Collection System for Scanning Tunneling Microscope Light Emission Spectroscopy;Japanese Journal of Applied Physics;2001-09-15

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