A high-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing

Author:

Lee M.-K.,Tseng Y.-C.,Chu C.-H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photodetector properties of [perovskite - porous silicon] heterojunction;TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY: TMREES21Gr;2022

2. Ideality factor of Al/nanosilver/PS/Si/Al sandwich structure;IOP Conference Series: Materials Science and Engineering;2021-02-01

3. Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy;Optical and Quantum Electronics;2020-10-17

4. Morphology and luminescence of photo-electrochemically synthesized porous silicon: Influence of varying current density;Malaysian Journal of Fundamental and Applied Sciences;2017-12-26

5. Photodetectors Based on Porous Silicon;Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three;2016-01-07

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