Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes-Reference-Cited by-同舟云学术

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Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

Published:1996-02-27 Issue:3 Volume:62 Page:269-273
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Sağlam M.,Ayyıldız E.,Gümüş A.,Türüt A.,Efeoğlu H.,Tüzemen S.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Different roles of quantum interference in a quantum dot photocell with two intermediate bands;The European Physical Journal Plus;2020-11

2. Inhibiting radiative recombination rate to enhance quantum yields in a quantum photocell*;Chinese Physics B;2020-06-01

3. Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact;Journal of Physics D: Applied Physics;2016-10-07

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