Light intensity and efficiency enhancement of n-ZnO/NiO/p-GaN heterojunction-based white light-emitting diodes using micro-pillar array
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
https://link.springer.com/content/pdf/10.1007/s12596-022-00836-w.pdf
Reference27 articles.
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3. W.N. Carr, G.E. Pittman, One-watt GaAs p-n junction infrared source. Appl. Phys. Lett. 3, 173 (1963). https://doi.org/10.1063/1.1753837
4. I. Schnitzer et al., 30% external quantum efficiency from surface textured, thin-film light emitting diodes. Appl. Phys. Lett. 63, 2174 (1993). https://doi.org/10.1063/1.110575
5. R. Windisch et al., Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes. Appl. Phys. Lett. 74, 2256 (1999). https://doi.org/10.1063/1.123817
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